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PD - 96976D
IRF6626
DirectFET Power MOSFET
RoHS compliant containing no lead or bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for both Sync. FET and some Control FET applications l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques
l
Typical values (unless otherwise specified)
VDSS Qg
tot
VGS Qgd
6.7nC
RDS(on) Qgs2
1.6nC
RDS(on) Qoss
13nC
30V max 20V max 4.0m@ 10V 5.2m@ 4.5V
Qrr
5.4nC
Vgs(th)
1.8V
19nC
ST
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT
DirectFET ISOMETRIC
Description
The IRF6626 combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6626 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6626 has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
15
Typical RDS(on) (m)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAe
e
h h k
f
VGS, Gate-to-Source Voltage (V)
30 20 16 13 72 130 24 13
6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 10 20 ID= 13A VDS= 24V VDS= 15V
A
mJ A
ID = 16A 10
T J = 125C
5 T J = 25C 0 3 4 5 6 7 8
30
VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage
QG Total Gate Charge (nC)
Fig 2. Typical On-Resistance vs. Gate Voltage
Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET MOSFETs Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25C, L = 0.29mH, RG = 25, IAS = 13A. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
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11/17/05
IRF6626
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
30 --- --- --- 1.35 --- --- --- --- --- 64 --- --- --- --- --- --- ---
---
Typ. Max. Units
--- 23 4.0 5.2 --- -6.0 --- --- --- --- --- 19 5.2 1.6 6.7 5.5 8.3 13
---
Conditions
--- --- 5.4 7.1 2.35 --- 1.0 150 100 -100 --- 29 --- --- --- --- --- 1.5 --- --- --- --- --- --- ---
VGS = 0V, ID = 250A V mV/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 16A g VGS = 4.5V, ID = 13A g V mV/C A nA S VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 13A VDS = 15V nC VGS = 4.5V ID = 13A See Fig. 17 nC
VDS = VGS, ID = 250A
VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V g ID = 13A
--- --- --- --- --- --- ---
13 15 17 4.5 2380 530 260
ns
Clamped Inductive Load VGS = 0V
pF
VDS = 15V = 1.0MHz
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) e Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- --- --- 15 5.4 130 1.0 23 8.1 V ns nC
Min.
---
Typ. Max. Units
--- 52 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 13A, VGS = 0V g TJ = 25C, IF = 13A di/dt = 100A/s g
Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%.
2
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IRF6626
Absolute Maximum Ratings
PD @TA = 25C PD @TA = 70C PD @TC = 25C TP TJ TSTG Power Dissipation Power Dissipation Power Dissipation Peak Soldering Temperature Operating Junction and Storage Temperature Range
h h k
Parameter
Max.
2.2 1.4 42 270 -40 to + 150
Units
W
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB Junction-to-Ambient Junction-to-Ambient Junction-to-Ambient Junction-to-Case Junction-to-PCB Mounted Linear Derating Factor
hl il jl kl
Parameter
Typ.
--- 12.5 20 --- 1.0 0.017
Max.
58 --- --- 3.0 ---
Units
C/W
gA
W/C
100
D = 0.50
Thermal Response ( Z thJA )
10
1
0.20 0.10 0.05 0.02 0.01
J J 1
R1 R1 2
R2 R2
R3 R3 3
R4 R4 4
R5 R5 A 5
Ri (C/W)
0.6677 1.0463 1.5612 29.2822 25.4550
i (sec)
0.000066 0.000896 0.004386 0.686180 32
0.1
1
2
3
4
5
0.01
Ci= i/Ri SINGLE PULSE Ci i/Ri ( THERMAL RESPONSE )
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100
0.001 1E-006 1E-005 0.0001 0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Surface mounted on 1 in. square Cu board, steady state. Used double sided cooling , mounting pad. Mounted on minimum footprint full size board with metalized
back and with small clip heatsink. Notes:
TC measured with thermocouple incontact with top (Drain) of part. R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu board (still air).
Mounted to a PCB with a thin gap filler and heat sink. (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6626
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
1
2.5V
10
2.5V
60s PULSE WIDTH
0.1 0.1 1 Tj = 25C 10
1
60s PULSE WIDTH
Tj = 150C 0.1 1 10 100 1000
100
1000
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 VDS = 15V 60s PULSE WIDTH 100 T J = 150C 10 T J = 25C T J = -40C
Typical RDS(on) (Normalized)
Fig 5. Typical Output Characteristics
1.5 ID = 16A VGS = 4.5V
ID, Drain-to-Source Current ()
V GS = 10 1.0
1
0.1 1 2 3 4
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (C)
Fig 6. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
Fig 7. Normalized On-Resistance vs. Temperature
25 T J = 25C 20
Typical RDS(on) ( m)
C, Capacitance(pF)
10000
15
Vgs = 3.0V Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V
Ciss 1000 Coss Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100
10
5
0 0 20 40 60 80 100
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
4
Fig 9. Typical On-Resistance vs. Drain Current and Gate Voltage
ID, Drain Current (A)
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IRF6626
1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100 T J = 150C 10 T J = 25C T J = 40C
ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A)
100
100sec
10
1msec 10msec
1
1 VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-to-Drain Voltage (V)
0.1
Ta = 25C Tj = 150C Single Pulse 0.01 0.10 1.00 10.00 100.00
0.01 VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
80
VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50A
70 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (C)
ID, Drain Current (A)
-75
-50
-25
0
25
50
75
100 125 150
T J , Temperature ( C )
Fig 12. Maximum Drain Current vs. Case Temperature
100
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Threshold Voltage vs. Temperature
ID 80
TOP
5.6A 8.4A BOTTOM 13A
60
40
20
0 25 50 75 100 125 150 Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6626
Current Regulator Same Type as D.U.T.
Id Vds Vgs
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Qgs1 Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS
+ V - DD
A
20V
tp
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD VDS
90%
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6626
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFET Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
G = GATE D = DRAIN S = SOURCE
D G D
S S
D
D
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IRF6626
DirectFET Outline Dimension, ST Outline (Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC MAX CODE MIN 4.85 A 4.75 3.95 B 3.70 2.85 C 2.75 0.45 D 0.35 0.62 E 0.58 0.62 F 0.58 0.79 G 0.75 0.57 H 0.53 0.30 J 0.26 0.98 K 0.88 2.28 L 2.18 0.70 M 0.59 0.08 N 0.03 0.17 P 0.08 IMPERIAL MIN MAX 0.187 0.191 0.146 0.156 0.108 0.112 0.014 0.018 0.023 0.024 0.023 0.024 0.030 0.031 0.021 0.022 0.010 0.012 0.035 0.039 0.086 0.090 0.023 0.028 0.001 0.003 0.003 0.007
DirectFET Part Marking
8
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IRF6626
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6626). For 1000 parts on 7" reel, order IRF6626TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MIN MAX MIN CODE MAX MIN MIN MAX MAX 12.992 6.9 N.C A N.C 177.77 N.C 330.0 N.C 0.795 0.75 B N.C 19.06 20.2 N.C N.C N.C 0.504 0.53 C 0.50 0.520 13.5 12.8 13.2 12.8 0.059 0.059 D N.C 1.5 1.5 N.C N.C N.C 3.937 2.31 E N.C 58.72 100.0 N.C N.C N.C F N.C N.C 0.53 N.C N.C 0.724 18.4 13.50 G 0.488 0.47 11.9 12.4 N.C 0.567 14.4 12.01 H 0.469 0.47 11.9 N.C 11.9 0.606 15.4 12.01
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 11/05
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